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Artigo Científico | Filmes Ferroelétricos | Inglês | 03/07/2000
Autores: A.H.M. Gonzalez, A.Z. Simões, B.D. Stojanovic, James José Varela, M.A. Zaghete
Palavras-chave: crystallization, dip-coating, pechini method, plzt
Resumo: Lead lanthanum zirconate titanate [PLZT (9/65/35)] thin films were prepared by dip-coating on Si (100) or Si/Ti/Pt (100) substrates using a polymeric precursor solution and annealed at 650 °C for 3 h. Perovskite phase formation of the PLZT thin films and microstructure were analysed using XRD and SEM. Effects of Si (100), Si/Ti/Pt (100) substrates and atmosphere on crystallization of PLZT thin films were studied. Films deposited on platinum coated silicon (100) show a heterogeneous surface with presence of bubbles. Otherwise, the PLZT (9/65/35) thin films deposited on silicon (100) substrate shows a more uniform surface after annealing in oxygen atmosphere.
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