Atenção

Fechar

Banner
Biblioteca

Artigos Técnicos

Artigo Científico | Geral Superfícies e Filmes Finos | Inglês | 30/09/2002

Boron doped diamond thin films on large area Ti6Al4V substrates for electrochemical application

Autores: Alessandra V. Diniz, Evaldo José Corat, Neidenei G. Ferreira, Vladimir Jesus Trava-Airoldi

Palavras-chave: boron doped-diamond, electrochemistry, ti6al4v

Resumo: Boron doped diamond thin films were grown on titanium alloy substrates (Ti6Al4V) with 36 × 35 × 1.3 mm at 873-933 K at 6.5 × 103 Pa during 8 h by hot filament CVD assisted technique. The boron source was obtained from a H2 line forced to pass through a bubbler containing B2O3 dissolved in methanol (B\C = 6000 ppm). The films were grown on both sides of perforated and non-perforated substrates. Emphasis for diamond growing on perforated substrates have been done in order to increase the active surface area and hereafter to promote an easier electrolyte flow for wastewater treatment. The electrode performance was determined by cyclic voltammetry measurements in KCl, KNO3, Na2SO4, HCl, HNO3 and H2SO4 solutions and the reversibility behavior of the Fe(CN)63-/4- at the Ti6Al4V/Diamond electrode were studied. Also, Scaning Electron Microcopy and Raman Scattering Spectroscopy were used for morphology and diamond quality evaluation, respectively.

Clique aqui para ler na íntegra

Materials Research

« Voltar