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Artigo Científico | Fratura | Inglês | 09/08/2003
Autores: Xuejun Zheng, Yichun Zhou, Zhi Yan
Palavras-chave: annealing procedure, ferroelectric property, fracture toughness, pzt thin film, x-ray diffraction
Resumo: Crystalline, electric and fracture properties of Pb(Zr0.52Ti0.48)O3 (PZT) thin films are strongly affected by annealing temperatures in rapid treatment annealing (RTA) of metal organic decomposition (MOD). X-ray diffraction (XRD), RT66A standard ferroelectric analyzer and Vickers indentation method were used to investigate the crystalline, ferroelectric and mechanical properties, respectively. PZT thin film with complete perovskite structure and best ferroelectric property can be obtained at 750 °C, however the fracture toughness was weaker than the thin films annealed at 600 °C and 650 °C. With the increase of annealing temperature from 600 °C to 750 °C, the remanent polarization and coercive field increased in the ranges 13.8~25.2 (µC/cm2) and 7.2~8.3 (kV/cm) respectively, while the fracture toughness of PZT thin films decreased from 0.49 MPam1/2 to 0.47 MPam1/2.
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