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Artigo Científico | Análise de Tensões Residuais | Inglês | 30/09/2002
Autores: Adriana F. Azevedo, Evaldo José Corat, Neidenei G. Ferreira, Nélia Ferreira Leite, Vladimir Jesus Trava-Airoldi
Palavras-chave: bias enhanced nucleation (ben), diamond nucleation, plasma, stress
Resumo: The stress evolution in diamond films grown on Ti6Al4V was investigated in order to develop a comprehensive view of the residual stress formation. Residual stress is composed of intrinsic stress induced during diamond film growth and extrinsic stress caused by the different thermal expansion coefficients between the film and substrate. In the coalescence stage it has been observed that the residual stress is dominated by the microstructure, whereas on continuous films, the thermal stress is more important. In this work diamond thin films with small grain size and good size and good quality were obtained in a surface wave-guide microwave discharge, the Surfatron system, with a negative bias voltage applied between the plasma shell and substrate. For above of –100V applied bias, the ratio of carbon sp3/sp2 bond may increase and the nucleation rate increase arising the high value at the –250V applied bias. Stress measurements and sp3 content in the film were studied by Raman scattering spectroscopy. The total residual stress is compressive and varied from –1.52 to –1.48 GPa between 0 and -200 V applied bias, respectively, and above the –200 V, the compressive residual stress increased drastically to –1.80 GPa. The diamond nucleation density was evaluated by top view SEM images.
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